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YAN Bo, ZHANG Xiao-min, LU Xin. A MODEL OF MATERIAL REMOVAL RATE DURING CHEMICAL MECHANICAL PLANARIZATION OF MICROELECTRONIC MATERIALS[J]. Engineering Mechanics, 2004, 21(5): 126-131.
Citation: YAN Bo, ZHANG Xiao-min, LU Xin. A MODEL OF MATERIAL REMOVAL RATE DURING CHEMICAL MECHANICAL PLANARIZATION OF MICROELECTRONIC MATERIALS[J]. Engineering Mechanics, 2004, 21(5): 126-131.
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A MODEL OF MATERIAL REMOVAL RATE DURING CHEMICAL MECHANICAL PLANARIZATION OF MICROELECTRONIC MATERIALS

  • Department of Engineering Mechanics, Chongqing 400044, China;2. College of Civil Engineering, Chongqing University, Chongqing 400044, China

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  • Received Date: January 09, 2003
  • Revised Date: June 13, 2003
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  • The deformation of materials and material removal mechanism during chemical mechanical palnarization (CMP) processing of microelectronic materials are numerically analyzed using finite element method. The dependence of force acting on particles during CMP on nominal pressure, particle concentration and characteristics of pad is determined. With the force acting on particles, a material removal rate (MRR) model is proposed. The results predicted with the model are in good agreement with the available experimental results.
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