摘要: 考虑到芯片实际应用环境的复杂性，针对体硅(SI)和绝缘体上硅(SOI)两种工艺的静态随机存储器(SRAM)，测试研究温度效应分别对这两种不同工艺存储器芯片敏感度的影响. 依据两种工艺下金属氧化物半导体(Metal Oxide Semiconductor, MOS)器件结构的异同，对两种工艺下MOS器件的温度效应进行对比分析；结合温箱和直接功率注入法(DPI)的测试设备搭建了一个可用于评估温度和电磁干扰(EMI)共同作用到静态随机存储器的测试平台. 通过理论与试验研究发现随着温度的升高，两款不同工艺的SRAM存储器芯片敏感度阈值都会增加，且在100 MHz之后SOI工艺的敏感度阈值增加普遍大于SI工艺. 这对于SOI和SI工艺集成电路在高低温环境下电磁兼容性的研究具有一定意义.
Temperature effect on electromagnetic sensitivity of SRAM chips in SI and SOI technologies
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Abstract: Considering the complexity of the practical application environment of the chip, the effects of temperature on the sensitivity of static random access memory (SRAM) chips with bulk silicon (SI) and Silicon on insulator (SOI) technologies were tested and studied. According to the similarities and differences of metal oxide semiconductor (MOS) devices under two technologies, the temperature effects of MOS devices under two technologies are compared and analyzed. A testing platform was built to evaluate the effect of temperature and electromagnetic interference (EMI) on SRAM by combining the temperature chamber and direct power injection (DPI) method test equipment. Through theoretical and experimental research, it is found that the sensitivity thresholds of SRAM memory chips of different technologies will increase with the increase of temperature, and the sensitivity threshold of SOI technology after 100MHz is generally larger than that of SI technology. This has certain significance for the study of electromagnetic compatibility of SOI and SI technologies integrated circuits in high and low temperature environments